zowie technology corporation general purpose transistor npn silicon lead free product MMBT3904WG 1 2 3 rating symbol value unit characteristic symbol min. max. unit collector-emitter voltage v ceo 40 vdc collector-base voltage v cbo 60 vdc emitter-base voltage v ebo 6.0 vdc collector current-continuous i c 200 madc characteristic symbol max. unit total device dissipation fr-5 board (1) t a =25 o c derate above 25 o c p d 225 1.8 mw mw / o c total device dissipation alumina substrate, (2) t a =25 o c derate above 25 o c p d v (br)cbo 300 2.4 60 - mw mw / o c thermal resistance junction to ambient 556 o c / w maximum ratings thermal characteristics electrical characteristics (t a =25 o c unless otherwise noted) v (br)ceo 40 - vdc vdc off characteristics r ja thermal resistance junction to ambient 417 o c / w r ja junction and storage temperature collector-base breakdowe voltage ( i c =10 uadc, i e =0 ) v (br)ebo 6.0 - vdc emitter-base breakdowe voltage ( i e =10 uadc, i c =0 ) collector-emitter breakdowe voltage (3) ( i c =1.0madc, i b =0 ) i bl - 50 nadc base cutoff current ( v ce =30 vdc, v eb =3.0 vdc ) i cex - 50 nadc collector cutoff current ( v ce =30 vdc, v eb =3.0 vdc ) -55 to +150 o c t j, t stg zowie t echnology corporation 2006/1 1 emitter base collector sot-323 1 2 3
zowie technology corporation characteristic symbol min. max. unit electrical characteristics (t a =25 o c unless otherwise noted) (continued) h fe 40 70 100 60 30 - - 300 - - - on characteristics (3) v ce (sat) vdc dc current gain ( i c =0.1 madc, v ce= 1.0 vdc ) ( i c =1.0 madc, v ce= 1.0 vdc ) ( i c =10 madc, v ce= 1.0 vdc ) ( i c =50 madc, v ce= 1.0 vdc ) ( i c =100 madc, v ce= 1.0 vdc ) collector-emitter saturation voltage (3) ( i c =10 madc, i b =1.0 madc ) ( i c =50 madc, i b =5.0 madc ) - - 0.2 0.3 v be (sat) vdc base-emitter saturation voltage (3) ( i c =10 madc, i b =1.0 madc ) ( i c =50 madc, i b =5.0 madc ) 0.65 - 0.85 0.95 f t c obo 300 - - 4.0 mh z small-signal characteristic c ibo pf pf current-gain-bandwidth product ( i c =10 madc, v ce =20 vdc, f=100 mh z ) output capacitance ( v cb =5.0 vdc, i e =0, f=1.0 mh z ) input capacitance ( v eb =0.5 vdc, i c =0, f=1.0 mh z ) input impedance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) - 8.0 h ie k ohms 1.0 10 voltage feedback ratio ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h re x 10 -4 0.5 8.0 small-signal current gain ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h fe - 100 400 output admittance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h oe u mhos 1.0 40 noise figure ( v ce =5.0 vdc, i c =100 uadc, r s =1.0 k ohm, f=1.0 kh z ) n f db - 5.0 tr td - 35 switching characteristics ts ns rise time delay time storage time - 35 tf ns fall time ( v cc =3.0 vdc, v be =-0.5 vdc, i c =10 madc, i b1 =1.0 madc ) ( v cc =3.0 vdc, i c =10 madc, i b1 =i b2= 1.0 madc ) - - 200 50 (1) fr-5=1.0 x 0.75 x 0.062in. (2) alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) pulse test : pulse width 300us, duty cycle 2.0%. zowie t echnology corporation 2006/1 1
zowie technology corporation 2006/11 zowie technology corporation MMBT3904WG figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit + 3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns 0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns - 9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500us * total shunt capacitance of test jig and connectors reverse bias voltage ( volts ) 2.0 3.0 5.0 7.0 10 1.0 0.1 i c , collector current ( ma ) 5000 1.0 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance ( pf ) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t j =25 o c t j =125 o c typical transient characteristics v cc =40 v i c /i b =10 figure 3. capacitance figure 4. charge data q t q a
zowie technology corporation 2006/11 zowie technology corporation figure 5. turn-on time i c , collector current ( ma ) 70 100 200 300 500 50 figure 6. rise time figure 7. storage time figure 8. fall time i c , collector current ( ma ) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t r , rise time ( ns ) i c , collector current ( ma ) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 5 10 30 7 20 70 100 200 300 500 50 5 10 30 7 20 t f , fall time ( ns ) t' s , storage time ( ns ) t d @ v ob =0 v t r @ v cc =3.0 v i c /i b =10 40 v 15 v 2.0 v 1.0 2.0 3.0 10 20 70 100 5.0 7.0 30 50 200 i c /i b =20 i c /i b =20 i c /i b =10 i c /i b =10 i b1 /i b2 t' s = t s - 1 /8 t f i c , collector current ( ma ) 1.0 2.0 3.0 10 20 70 100 5.0 7.0 30 50 200 i c /i b =20 i c /i b =10 v cc =40 v i b1= i b2 figure 9. f, frequency (khz) 4 6 8 10 12 2 nf, noise figure ( bb ) 0 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 figure 10. r s , source resistance ( k ohms ) 0 4 6 8 10 12 14 2 nf, noise figure ( bb ) 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 source resistance=200 i c =1.0 ma source resistance=200 i c =0.5 ma source resistance=500 i c =100ua source resistance=1.0 k i c =50ua f = 1.0 kh z i c =1.0 ma i c =0.5 ma i c =50 ua i c =100 ua MMBT3904WG
zowie technology corporation 2006/11 zowie technology corporation figure 11. current gain i c , collector current ( ma ) figure 12. output admittance figure 13. input impedance figure 15. dc current gain figure 14. voltage feedback ratio i c , collector current ( ma ) h fe , current gain h oe , outputadmittance (umhos) i c , collector current ( ma ) i c , collector current ( ma ) h re , voltage feedback ratio(x 10-4) h ie , input impedance (k ohms) 70 100 200 300 50 30 100 50 5 10 20 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2.0 3.0 5.0 7.0 10 1.0 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 i c , collector current ( ma ) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h fe , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 typical static characteristics t j = +25 o c t j = -55 o c t j = +125 o c v ce =1.0v MMBT3904WG
zowie technology corporation 2006/11 zowie technology corporation figure 17. " on " voltage figure 16. collector saturation region figure 18. temperature coefficients i c , collector current ( ma ) i c , collector current ( ma ) coefficient ( mv / o c ) v, voltage ( volts ) i b , base current ( ma ) 0.4 0.6 0.8 1.0 0.2 0.1 v ce , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 0.07 0.05 0.03 0.02 0.01 i c = 1.0 ma 10 ma 30 ma 100 ma t j = 25 o c 0.4 0.6 0.8 1.0 1.2 0.2 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 vb for v be (sat) vc for v ce (sat) +25 o c to +125 o c -55 o c to +25 o c -55 o c to +25 o c +25 o c to +125 o c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ i ce =1.0 v MMBT3904WG
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